AFN2326BS mosfet equivalent, n-channel enhancement mode mosfet.
150V/1.5A,RDS(ON)=350mΩ@VGS=10V 150V/1.0A,RDS(ON)=400mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.
Pin Description ( SOT-23-3L )
AFN2326BS
150V N-Channel Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=350mΩ@VGS=10.
AFN2326BS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.
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