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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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ME6100(Green) 1.0A Adjustabe and Fixed Voltage LDO Linear Regulator GENERAL DESCRIPTION FEATURES The ME6100 is a low-dropout linear regulator that

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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ME4938D/ME4938D-G Dual N-Channel 20-V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4938D is the Dual N-Channel logic enhancement mode powe

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N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using

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ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect

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ME7806S-G N-Channel 30V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME7806S N-Channel logic enhancement mode power field effect tr

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1A Low Dropout Voltage Regulator GENERAL DESCRIPTION The ME1117 series of adjustable and fixed voltage regulators are designed to provide 1A output cu

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1A Low Dropout Voltage Regulator GENERAL DESCRIPTION The ME1117 series of adjustable and fixed voltage regulators are designed to provide 1A output cu

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistor

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids@15A ≦18.5mΩ FEATURES Advanced

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N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESCRIPTION The ME95N03 is the N-Channel logic enhancement mode power field effect transistors

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N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7636 is the N-Channel logic enhancement mode power field effect transistors are produc

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N-Channel 30V (D-S) MOSFET, ESD Protected ME7804S-G GENERAL DESCRIPTION The ME7804-G N-Channel logic enhancement mode power field effect transistors

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