ME60N03
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
CONFIGURATION
(TO-252) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃
Symbol
VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC
Limit
30 ±20 50 100 50 23 -55 to 150 110 T≦10 sec Steady State 20 15 40
Unit
V V A A W ℃ m J ℃/W ℃/W
Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.5m H,Rg=25Ω) Thermal Resistance-Junction to Ambient- Thermal Resistance-Junction to Case
- The device mounted on 1in2 FR4 board with 2 oz copper
Apr, 2007
- Version 4.1
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol
STATIC BVDSS VGS(th) IGSS...
