ME60N03A
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
CONFIGURATION
(TO-252) Top View
Absolute Maximum Ratings (TA=25
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation
Unless Otherwise Noted)
Symbol
VDSS VGSS ID IDM
Limit
25 ±20 50 100 50 23 -55 to 150 110 15 Steady State 20 40
Unit
V V A A W
TA=25 TA=70
PD TJ, Tstg ) EAS RθJA RθJC
Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.5m H,Rg=25 Thermal Resistance-Junction to Ambient- Thermal Resistance-Junction to Case
- The device mounted on 1in2 FR4 board with 2 oz copper
Apr, 2007
- Version 4.1
Free Datasheet http://..net/
25V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25
Symbol
STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qgs Qgd...
