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ME15N10-G - N-Channel 100-V (D-S) MOSFET

Download the ME15N10-G datasheet PDF. This datasheet also covers the ME15N10 variant, as both devices belong to the same n-channel 100-v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

ME15N10/ME15N10-G

Key Features

  • RDS(ON)≦100mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME15N10-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME15N10-G
Manufacturer Matsuki
File Size 0.99 MB
Description N-Channel 100-V (D-S) MOSFET
Datasheet download datasheet ME15N10-G Datasheet

📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.