ME100N15T-G - N-Channel MOSFET

Matsuki

General Description

The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦13.6mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME100N15T-G n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME100N15T-G
Manufacturer	Matsuki
File Size	694.87 KB
Description	N-Channel MOSFET
Datasheet	ME100N15T-G Datasheet

Other Datasheets by Matsuki

Part Number	Description
ME100N03T	N-Channel MOSFET
ME100N03T-G	N-Channel MOSFET
ME10N15	N-Channel MOSFET
ME10N15-G	N-Channel MOSFET
ME1117	1A Low Dropout Voltage Regulator
ME1117-1.8	1A Low Dropout Voltage Regulator
ME1117-2.5	1A Low Dropout Voltage Regulator
ME1117-3.3	1A Low Dropout Voltage Regulator
ME1117-5.0	1A Low Dropout Voltage Regulator
ME12N04	N-Channel 40-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-220) Top View ME100N15T-G FEATURES ● RDS(ON)≦13.