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ME9435A - 30V P-Channel Enhancement Mode MOSFET

General Description

The ME9435A is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 1. 2. -30V/-5.3A, RDS(ON)=40mΩ@VGS=-10V -30V/-4.2A, RDS(ON)=60mΩ@VGS=-4.5V PIN.

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Datasheet Details

Part number ME9435A
Manufacturer Matsuki
File Size 668.53 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME9435A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME9435A 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435A is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and lower power loss that are needed in a very small outline surface mount package. FEATURES 1. 2. -30V/-5.3A, RDS(ON)=40mΩ@VGS=-10V -30V/-4.2A, RDS(ON)=60mΩ@VGS=-4.