ME90N03 - N-Channel MOSFET

Matsuki

General Description

The ME90N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦4.8mΩ@VGS=10V.
RDS(ON)≦9mΩ@VGS=4.5V.
ESD Protected.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME90N03 n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME90N03
Manufacturer	Matsuki
File Size	1.11 MB
Description	N-Channel MOSFET
Datasheet	ME90N03 Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME90N03-G	N-Channel MOSFET
ME90P03	P-Channel MOSFET
ME90P03-G	P-Channel MOSFET
ME9435	30V P-Channel Enhancement Mode MOSFET
ME9435A	30V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME90N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦4.8mΩ@VGS=10V ● RDS(ON)≦9mΩ@VGS=4.