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FDC6330L - Integrated Load Switch
· 11 •V DROP DROP V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω IN L (ON) = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω. IN L (ON) • Control MOSFET (Q1) includes Ze...FDC636P - P-Channel MOSFET
· 8 -2.8 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. SuperSOTTM-6 package design using copper lead frame for superior the...FDC6332L - Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET
· 7 • –1 A, 8 V. RDS(ON) = 350 mΩ @ VGS = –4.5 V RDS(ON) = 500 mΩ @ VGS = –2.5 V RDS(ON) = 750 mΩ @ VGS = –1.8 V • N-Channel MOSFET includes Zener protect...FDC2612 - N-Channel MOSFET
· 6 • 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capabi...FDC642P - P-Channel MOSFET
· 6 -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High p...FDC6310P - Dual P-Channel 2.5V Specified PowerTrench MOSFET
· 5 • –2.2 A, –20 V. RDS(ON) = 125 mΩ @ V GS = –4.5 V RDS(ON) = 190 mΩ @ V GS = –2.5 V • Low gate charge • Fast switching speed • High performance trench ...FDC6331L - Integrated Load Switch
· 5 • –2.8 A, –8 V. RDS(ON) = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V • Control MOSFET (Q1) includes Zener ...FDC5614P - 60V P-Channel Logic Level PowerTrench MOSFET
· 4 • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V Applications • DC-DC converters • Load switch • Power management • F...FDC6306P - Dual P-Channel 2.5V Specified PowerTrench MOSFET
· 4 • -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V • • • • Low gate charge (3 nC typical). Fast switching speed. High...FDC6318P - Dual P-Channel 1.8V PowerTrench Specified MOSFET
· 4 • –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V RDS(ON) = 125 mΩ @ VGS = –2.5 V RDS(ON) = 200 mΩ @ VGS = –1.8 V • High performance trench technology f...FDC6401N - Dual N-Channel 2.5V Specified PowerTrench MOSFET
· 4 • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trench technology for extreme...FDC6506P - Dual P-Channel Logic Level PowerTrench MOSFET
· 4 • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V • • • • Low gate charge (2.3nC typical). Fast switching speed. Hig...FDC653N - N-Channel MOSFET
· 4 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superio...FDC655AN - Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET
· 4 6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V R DS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOTTM-6 package: s...FDC658P - Single P-Channel MOSFET
· 4 -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for e...FDC3512 - N-Channel MOSFET
· 3 • 3.0 A, 80 V RDS(ON) = 77 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6 V Applications • DC/DC converter • High performance trench technology for extre...FDC5612 - 60V N-Channel PowerTrenchTM MOSFET
· 3 • 4.3 A, 60 V. RDS(ON) = 0.055 W • • • • @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V. Low gate charge (12.5nC typical). Fast switching speed. High per...FDC6000NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET
· 3 • 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • High performance trench technology for ex...FDC6020C - Complementary PowerTrench MOSFET
· 3 • • • • • Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V RDS(ON) = 82 mΩ @ VGS = – 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 m...FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET
· 3 • –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.8 V • Low gate charge, High Power and Current ...