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FDC6333C - 30V N & P-Channel PowerTrench MOSFETs

Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V.
  • Q2.
  • 2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS =.
  • 10 V RDS(ON) = 220 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT.
  • 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

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FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V • Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON).
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