TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) D 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced

FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ M

FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Lo

FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT FGH60N60UFDTU_F085 600V, 60A Field Stop IGBT Features • High Current Capability • Low Saturation Volta

MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128 mW FDT86244 Description This N−Channel MOSFET is produced using Fairchild onsemi adva

FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve th

www.DataSheet.co.kr FLAT DISPLAY TECHNOLOGY This product is RoHS compliant ̺ SPECIFICATION APPROVAL SHEET ̺ Fdt Tech Module No LP102V8IBx-FxR 10.2

IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBT

IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBT

FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013

FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.8 A, 128 mΩ Feature

FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ M

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 1

IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs