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FDT457N - N-Channel MOSFET

Key Features

  • ƽ 5 A, 30 V. RDS(ON) = 0.06 ȍ @ VGS = 10 V RDS(ON) = 0.09 ȍ @ VGS = 4.5 V. ƽ High density cell design for extremely low RDS(ON). ƽ High power and current handling capability in a widely used surface mount package. SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1 2 3 D G D S 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain Ƶ Absolute Maximum Ratings TA = 25ć unless otherwise noted.

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SMD Type N-Channel MOSFET FDT457N TraMnOsiSsFtoErsT Ƶ Features ƽ 5 A, 30 V. RDS(ON) = 0.06 ȍ @ VGS = 10 V RDS(ON) = 0.09 ȍ @ VGS = 4.5 V. ƽ High density cell design for extremely low RDS(ON). ƽ High power and current handling capability in a widely used surface mount package. SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1 2 3 D G D S 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.