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VM3004 - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,90A, RDS(ON) =2.6mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number VM3004
Manufacturer Viva Electronics
File Size 632.28 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet VM3004 Datasheet

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Full PDF Text Transcription

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VM3004 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG G S 30V N-Channel MOSFETs BVDSS RDSON ID 30V 2.6mΩ 90A Features  30V,90A, RDS(ON) =2.
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