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VM3001 - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 260A, RDS(ON) =1.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number VM3001
Manufacturer Viva Electronics
File Size 459.97 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet VM3001 Datasheet

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Full PDF Text Transcription

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VM3001 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD S SSG G GS S S S 30V N-Channel MOSFETs BVDSS 30V RDSON 1.2mΩ ID 260A Features  30V, 260A, RDS(ON) =1.
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