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VM3008
30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
Q1
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
Q2
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PPAK5x6 Asymmetric Dual Pin Configuration
S1/D2 G2
S1/D2 G2
Pin1 G1 S1/D2 D1
S2
D1
G1
G1 S1/D2
D1 G2
S1
BVDSS 30V 30V
RDSON 3.3mΩ 0.
VM3008 Datasheet
