VM3008
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This
Q1 advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
Q2 performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Asymmetric Dual Pin Configuration
S1/D2 G2
S1/D2 G2
Pin1 G1 S1/D2 D1
S2
D1
G1
G1 S1/D2
D1 G2
S1
BVDSS 30V 30V
RDSON 3.3mΩ 0.7mΩ
ID 60A 210A
Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available D2
Applications
- MB / VGA / Vcore
- POL Buck Applications
- SMPS 2nd SR
S2
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
IDM EAS IAS
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
- Pulsed1 Single Pulse...
