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VM3003
30V Dual N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
Q1
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
Q2
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
DFN3x3 Asymmetric Dual Pin Configuration
S2 S2 G2S2
S2 S2 S2 G2
D1
D2
S1/D2
G1
G2
D1
D1
D1
G1D1
D1 D1 D1 G1
S1
S2
BVDSS RDSON
ID
30V
6.8mΩ
40A
30V
6.
VM3003 Datasheet
