VM3005
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
DFN2x2-6L 2EP Pin Configuration D
DD S
S S DD D
30V N-Channel MOSFETs
BVDSS RDSON
30V
19mΩ
8A
Features
- 30V,8A, RDS(ON) =19mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS 2nd SR
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS ID
IDM PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TA=25℃) Drain Current
- Continuous (TA=70℃) Drain Current
- Pulsed1 Power Dissipation (TA=25℃) Power Dissipation
- Derate...
