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Si3456BDV - N-Channel MOSFET

Features

  • Halogen free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free) Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 6Bxxx (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET.

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Datasheet Details

Part number Si3456BDV
Manufacturer Vishay
File Size 183.77 KB
Description N-Channel MOSFET
Datasheet download datasheet Si3456BDV Datasheet
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Full PDF Text Transcription

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N-Channel 30-V (D-S) MOSFET Si3456BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.035 at VGS = 10 V 0.052 at VGS = 4.5 V ID (A) 6.0 4.9 FEATURES • Halogen free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free) Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 6Bxxx (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.0 4.5 4.8 3.
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