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SI3454ADV - N-Channel 30-V (D-S) MOSFET

Features

  • ID (A) 4.5 3.8 rDS(on) (W) 0.060 @ VGS = 10 V 0.085 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 1 3 mm 6 5 2 3 4 (3) G 2.85 mm Ordering Information: Si3454ADV-T1 Si3454ADV-T1.
  • E3 (Lead Free) Marking Code: A4xxx (4) S N-Channel MOSFET.

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Datasheet Details

Part number SI3454ADV
Manufacturer Vishay Siliconix
File Size 61.47 KB
Description N-Channel 30-V (D-S) MOSFET
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Si3454ADV Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 4.5 3.8 rDS(on) (W) 0.060 @ VGS = 10 V 0.085 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 1 3 mm 6 5 2 3 4 (3) G 2.85 mm Ordering Information: Si3454ADV-T1 Si3454ADV-T1—E3 (Lead Free) Marking Code: A4xxx (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 30 "20 4.5 3.6 20 1.
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