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Si3458DV
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
0.10 @ VGS = 10 V 0.13 @ VGS = 4.5 V
ID (A)
"3.2 "2.8
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
2
5
3
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Single Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IAS PD TJ, Tstg
Symbol
VDS VGS
Limit
"60 "20 "3.2 "2.5 "15 "10 2
Unit
V
A
W 1.3 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a.
SI3458DV Datasheet
