Si1062X - N-Channel MOSFET

Features

TrenchFET® power MOSFET.
Gate-source ESD protected: 1000 V.
Material categorization:  for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	Si1062X
Manufacturer	Vishay
File Size	201.19 KB
Description	N-Channel MOSFET
Datasheet	Si1062X Datasheet
Additional preview pages of the Si1062X datasheet.

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Full PDF Text Transcription

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www.vishay.com Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET SC-89 (3 leads) D 3 Marking code: J 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) Configuration 2 S 20 0.420 0.492 0.597 0.762 1 0.53 Single FEATURES • TrenchFET® power MOSFET • Gate-source ESD protected: 1000 V • Material categorization:  for definitions of compliance please see www.vishay.

Published: Nov 9, 2014 |