Full PDF Text Transcription for SI1002R (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SI1002R. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com N-Channel 30 V (D-S) MOSFET Si1002R Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1...
View more extracted text
n) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V SC-75A D 3 ID (A) 0.5 0.2 0.2 0.05 Qg (TYP.) 0.72 nC 1 G Top View 2 S Marking Code: L Ordering Information: Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Gate-source ESD protected: 1000 V • Material categorization: For definitions of compliance please see www.vishay.
SI1002R Datasheet
