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SI1028X - Dual N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • ESD Protected: 550 V Typical HBM.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SI1028X
Manufacturer Vishay
File Size 175.15 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SI1028X Datasheet

Full PDF Text Transcription for SI1028X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI1028X. For precise diagrams, and layout, please refer to the original PDF.

Dual N-Channel 30 V (D-S) MOSFET Si1028X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.650 at VGS = 10 V 30 0.770 at VGS = 4.5 V ID (A) 0.48 0.45 Qg (Typ.) ...

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.650 at VGS = 10 V 30 0.770 at VGS = 4.5 V ID (A) 0.48 0.45 Qg (Typ.) 0.5 S1 1 G1 2 D2 3 SC-89 6 D1 5 G2 4 S2 FEATURES • TrenchFET® Power MOSFET • ESD Protected: 550 V Typical HBM • Material categorization: For definitions of compliance please see www.vishay.

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