SI1028X
FEATURES
- Trench FET® Power MOSFET
- ESD Protected: 550 V Typical HBM
- Material categorization:
For definitions of pliance please see .vishay./doc?99912
BENEFITS
- Low Offset Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Small Board Area
APPLICATIONS
- Load/Signal Switching for Portable Devices
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
- Battery Operated Systems
Marking Code
G XX
Lot Traceability and Date Code
Part # Code
Top View Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TA = 25 °C
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature...
