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SI1022R - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • Low On-Resistance: 1.25 .
  • Low Threshold: 2.5 V.
  • Low Input Capacitance: 30 pF.
  • Fast Switching Speed: 25 ns.
  • Low Input and Output Leakage.
  • Miniature Package.
  • ESD Protected: 2000 V.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SI1022R
Manufacturer Vishay
File Size 145.90 KB
Description N-Channel MOSFET
Datasheet download datasheet SI1022R Datasheet

Full PDF Text Transcription for SI1022R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI1022R. For precise diagrams, and layout, please refer to the original PDF.

N-Channel 60 V (D-S) MOSFET Si1022R Vishay Siliconix PRODUCT SUMMARY VDS(min.) (V) RDS(on) () 60 1.25 at VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 330 SC-75A (SOT-416) G1 ...

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25 at VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 330 SC-75A (SOT-416) G1 3D S2 Marking Code: E Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25  • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Miniature Package • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.