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Si1024X - Dual N-Channel 20V MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET: 1.8 V Rated.
  • Very Small Footprint.
  • High-Side Switching.
  • Low On-Resistance: 0.7 .
  • Low Threshold: 0.8 V (typ. ).
  • Fast Switching Speed: 10 ns.
  • 1.8 V Operation.
  • Gate-Source ESD Protected: 2000 V.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number Si1024X
Manufacturer Vishay
File Size 137.39 KB
Description Dual N-Channel 20V MOSFET
Datasheet download datasheet Si1024X Datasheet

Full PDF Text Transcription for Si1024X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for Si1024X. For precise diagrams, and layout, please refer to the original PDF.

Dual N-Channel 20 V (D-S) MOSFET Si1024X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 5...

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t VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350 S1 1 SOT-563 SC-89 6 D1 G1 2 100 Ω 100 Ω 5 G2 Marking Code: C D2 3 4 S2 Top View Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • 1.