SI1013CX
FEATURES
- Trench FET® power MOSFET
- 100 % Rg tested
- Typical ESD protection: 1000 V (HBM)
- Fast switching speed
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load / power switch for portable devices
- Drivers: relays, solenoids, displays
- Battery operated systems
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C TA = 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous...
