D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection.
Full PDF Text Transcription for SI1012R (Reference)
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SI1012R. For precise diagrams, and layout, please refer to the original PDF.
Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA...
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(W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA) 600 500 350 FEATURES D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.
SI1012R Datasheet
