Full PDF Text Transcription for SI1012CR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SI1012CR. For precise diagrams, and layout, please refer to the original PDF.
N-Channel 20 V (D-S) MOSFET Si1012CR Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 0.456 at VGS = 2.5 V 20 0.546 at VGS = 1.8 V 1.100 at VGS =...
View more extracted text
GS = 4.5 V 0.456 at VGS = 2.5 V 20 0.546 at VGS = 1.8 V 1.100 at VGS = 1.5 V ID (mA) 600 500 350 50 Qg (Typ.) 0.75 SC-75A G1 3D S2 Top View Ordering Information: Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET: 1.2 V Rated • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V • Material categorization: For definitions of compliance please see www.vishay.
SI1012CR Datasheet
