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SI3475DV - P-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.

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Datasheet Details

Part number SI3475DV
Manufacturer Vishay Siliconix
File Size 179.58 KB
Description P-Channel MOSFET
Datasheet download datasheet SI3475DV Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr Si3475DV New Product Vishay Siliconix P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) 1.61 at VGS = - 10 V 1.65 at VGS = - 6 V ID (A)a - 0.95 - 0.93 Qg (Typ) 8 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies RoHS COMPLIANT TSOP-6 Top View S D 1 6 D 3 mm D 2 5 D Marking Code AI XXX G G 3 4 S Lot Traceability and Date Code Part # Code 2.85 mm D P-Channel MOSFET Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
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