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SI3473DV - P-Channel 12-V (D-S) MOSFET

Features

  • ID (A) -7.9 - 7.0 - 5.9 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance.

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Datasheet Details

Part number SI3473DV
Manufacturer Vishay Siliconix
File Size 45.79 KB
Description P-Channel 12-V (D-S) MOSFET
Datasheet download datasheet SI3473DV Datasheet
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Full PDF Text Transcription

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Si3473DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = -4.5 V -12 0.029 @ VGS = -2.5 V 0.041 @ VGS = -1.8 V FEATURES ID (A) -7.9 - 7.0 - 5.9 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance APPLICATIONS D Load Switch D PA Switch (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 5.7 IDM IS -1.7 2.0 1.0 -55 to 150 -20 -0.9 1.
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