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NCE75H21TB - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • Maximum 175 °C junction temperature.
  • Very low Qgd reduces power loss from passing through Vplateau.
  • 100 % Rg and UIS tested.

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Datasheet preview – NCE75H21TB

Datasheet Details

Part number NCE75H21TB
Manufacturer VBsemi
File Size 252.14 KB
Description N-Channel MOSFET
Datasheet download datasheet NCE75H21TB Datasheet
Additional preview pages of the NCE75H21TB datasheet.

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Full PDF Text Transcription

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NCE75H21TB-VB NCE75H21TB-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0028 at VGS = 10 V 80 0.0030 at VGS = 7.5 V ID (A) 215 205 Qg (TYP.
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