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NCE75H35T - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE75H35T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Features

  • VDSS =75V,ID =350A RDS(ON) < 2.5mΩ @ VGS=10V （Typ：1.9 mΩ） Schematic diagram.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number NCE75H35T
Manufacturer NCE Power
File Size 342.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H35T Datasheet
Additional preview pages of the NCE75H35T datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE75H35T NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE75H35T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. GENERAL FEATURES ● VDSS =75V,ID =350A RDS(ON) < 2.5mΩ @ VGS=10V （Typ：1.
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