Datasheet4U Logo Datasheet4U.com

NCE70N100I - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE70N100I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) S Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

📥 Download Datasheet

Datasheet preview – NCE70N100I

Datasheet Details

Part number NCE70N100I
Manufacturer NCE Power Semiconductor
File Size 392.45 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE70N100I Datasheet
Additional preview pages of the NCE70N100I datasheet.
Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com Pb Free Product NCE70N100I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Published: |