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NCE75H21D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Features

  • VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE75H21D
Manufacturer NCE Power Semiconductor
File Size 299.59 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H21D Datasheet
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http://www.ncepower.com Pb Free Product NCE75H21D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
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