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SSM3J374R - Silicon P-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment SSM3J374R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J374R,LF SSM3J374R,LXGF SSM3J374R,LXHF.
  • YES YES (Note 1) General Use Unintended Use Automotive.

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Datasheet Details

Part number SSM3J374R
Manufacturer Toshiba
File Size 282.16 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J374R Datasheet

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SSM3J371R Silicon P-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J374R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment SSM3J374R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J374R,LF SSM3J374R,LXGF SSM3J374R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation 2021-05-28 Rev.2.
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