SSM3J317T
SSM3J317T ..
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
○ Power Management Switch Applications ○ High-Speed Switching Applications
- - 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V) : Ron = 107 mΩ (max) (@VGS = -4.5 V)
2.9±0.2 0.95 １ ２ ３
Unit: mm
+0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0.15
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse ID Symbol VDSS VGSS (Note 1) IDP (Note 1) PD (Note 2) t = 5s Tch Tstg Rating -20 ±8 -3.6 -7.2 700 1400 150
- 55 to 150 Unit V V
1.9±0.2
0.95 m W °C °C
0.7±0.05
1: Gate 2: Source
Note: Using continuously under heavy loads (e.g. the application of TSM 3: Drain high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating...
