Datasheet4U Logo Datasheet4U.com

TH58NVG4S0FTA20 - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

📥 Download Datasheet

General Description

The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.

The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments.

The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).

Overview

TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND.

Key Features

  • Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 8032 blocks Max 8192 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time C.

More Datasheets from Toshiba

Part Number Description
TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TH58NVG5S0FTA20 32-GBIT (4G x 8 BIT) CMOS NAND E2PROM
TH58NVG5S0FTAK0 32 GBIT (4G x 8 BIT) CMOS NAND E2PROM
TH58100FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TH58100FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TH58V128DC 128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
TH58V128FT 128Mbit (16M x 8bit) CMOS NAND E2PROM
TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP
TH50VSF2581AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP
TH50VSF2582AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP