TH50VSF2582AASB - SRAM AND FLASH MEMORY MIXED MULTI-CHIP

Toshiba

Datasheet Details

Part number	TH50VSF2582AASB
Manufacturer	Toshiba
File Size	610.76 KB
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP
Datasheet	TH50VSF2582AASB Datasheet

The TH50VSF2582/2583AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply for the TH50VSF2582/2583AASB can range from 2.7 V to 3.6 V.

TH50VSF2582/2583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP.

Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www. DataSheet4U. comCCf.
Data retention supply voltage VCCs = 1.5 V~3.6 V.
Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level).
Block erase architecture for flash memory 8 blocks of 8 Kbytes 63 blocks of 64 Kbytes.
Organization.
CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152.

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