TH50VSF3583AASB - MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba

Download the TH50VSF3583AASB datasheet PDF. This datasheet also includes the TH50VSF3582AASB variant, as both parts are published together in a single manufacturer document.

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TH50VSF3583AASB multi-chip integrated circuit silicon gate cmos by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TH50VSF3582AASB_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TH50VSF3583AASB
Manufacturer	Toshiba
File Size	611.07 KB
Description	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TH50VSF3583AASB Datasheet

General Description

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply.

Overview

TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP.

Key Features

Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www. DataSheet4U. com.
Data retention supply voltage VCCs = 1.5 V~3.3 V.
Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH).
Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes.
Organization.
CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152 words of 16 bits 4,194,.

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