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TH58NVG1S3AFT05 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Datasheet Details

Part number TH58NVG1S3AFT05
Manufacturer Toshiba
File Size 368.77 KB
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet download datasheet TH58NVG1S3AFT05 Datasheet

General Description

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks.

The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.

The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).

Overview

TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M u 8BITS) CMOS NAND.

Key Features

  • x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K  4K) bytes x Modes Read㧘Reset㧘Auto Page Program Auto Block Erase㧘Status Read x Mode control Serial input㧛output Command control x Powersupply x Program/Erase Cycles x Access time Cell array to register Serial Read Cycle x Operating current Read (50 ns cycle) Program (avg. ) Erase (avg. ) Standby x Package TSOP I 48-P-1220-0.50 (Weight : 0.53 g typ. ) VCC 2.7 V to 3.6 V 1E5 Cycles(W.

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