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SSM6P16FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM6P16FU
High Speed Switching Applications Analog Switch Applications
• Small package • Low on-resistance
: RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−20
V
Gate-Source voltage
VGSS
±10
V
Drain current Power dissipation
DC Pulse
ID
−100
mA
IDP
−200
PD(Note1)
200
mW
1: Source1 2: Gate1 3: Drain2 4: Source2
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
5: Gate2 6: Drain1
JEDEC
―
Note: Using continuously under heavy loads (e.g.
SSM6P16FU Datasheet
