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SSM6P35AFE - Silicon P-Channel MOSFET

Features

  • (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ. ) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ. ) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ. ) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ. ) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ. ) (@VGS = -4.5 V) 3. Packaging and Internal Circuit ES6 SSM6P35AFE 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-03 2021-02-01 Rev.3.0 SSM6P35AFE.

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Datasheet Details

Part number SSM6P35AFE
Manufacturer Toshiba
File Size 212.81 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6P35AFE Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS SSM6P35AFE 1. Applications • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V) 3. Packaging and Internal Circuit ES6 SSM6P35AFE 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-03 2021-02-01 Rev.3.0 SSM6P35AFE 4.
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