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SSM6P36TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P36TU
○ Power Management Switches
• • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V)
0.65 0.65 2.0±0.1 1.3±0.1 1 2 3
Unit: mm
2.1±0.1 1.7±0.1
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±8 -330 -660 500 150 −55 to 150 Unit V
5 4
mA mW °C °C
0.7±0.05
V
1.Source1
4.Source2 5.Gate2 6.Drain1
Note: Using continuously under heavy loads (e.g.
SSM6P36TU Datasheet
