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SSM6P69NU - P-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Note 1) (2) 1.8 V drive (3) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UDFN6 SSM6P69NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial pr.

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS SSM6P69NU 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Note 1) (2) 1.8 V drive (3) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UDFN6 SSM6P69NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-02 2018-03-27 Rev.1.0 SSM6P69NU 4.
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