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SSM6P15FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P15FU
High Speed Switching Applications Analog Switch Applications
• Small package
• Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
−100
mA
IDP
−200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2
6: Drain1
Note: Using continuously under heavy loads (e.g.
SSM6P15FU Datasheet
