The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P15FE
High Speed Switching Applications Analog Switch Applications
SSM6P15FE
• Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V)
: Ron = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
−100
mA
IDP
−200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM6P15FE Datasheet
