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SSM6K407TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K407TU
○ DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
2.1±0.1 1.7±0.1
+0.1 0.3-0.05
2.0±0.1 1.3±0.1 0.65 0.65
z 4V drive z Low ON-resistance
: Ron = 440mΩ (max) (@VGS = 4 V) : Ron = 300mΩ (max) (@VGS = 10 V)
1
6
2
5
3
4
0.166±0.05
0.7±0.05
Absolute Maximum Ratings (Ta = 25℃) (Note)
Characteristic
Drain–source voltage Gate–source voltage
Drain current
Drain power dissipation Channel temperature Storage temperature
DC Pulse
Symbol
Rating
VDSS VGSS
ID IDP PD (Note1) Tch Tstg
60 ±20
2 6 500 150 −55 to 150
Unit V V
A
mW °C °C
UF6
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7mg (typ.)
Note: Using continuously under heavy loads (e.g.
SSM6K407TU Datasheet
