SSM5H08TU - Silicon Epitaxial Schottky Barrier Diode

Toshiba Semiconductor

Datasheet Details

Part number	SSM5H08TU
Manufacturer	Toshiba Semiconductor
File Size	260.07 KB
Description	Silicon Epitaxial Schottky Barrier Diode
Datasheet	SSM5H08TU Datasheet
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SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter • • Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.5 6.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 25 20 0.

Published: Sep 19, 2014 |