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SSM5H03TU - Silicon Epitaxial Schottky Barrier Diode

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Datasheet Details

Part number SSM5H03TU
Manufacturer Toshiba Semiconductor
File Size 185.23 KB
Description Silicon Epitaxial Schottky Barrier Diode
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Full PDF Text Transcription

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SSM5H03TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H03TU DC-DC Converter • • Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 12 ±12 1.4 2.8 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C UFV DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 15 12 0.
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