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SSM5H14F - Silicon Epitaxial Schottky Barrier Diode

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Part number SSM5H14F
Manufacturer Toshiba Semiconductor
File Size 305.61 KB
Description Silicon Epitaxial Schottky Barrier Diode
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SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack • • • 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating 30 ±12 3.0 6.0 0.75 150 Unit V V A W °C 1. Gate 2. Source 3. Anode 4. Cathode 5.
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